#189: TIP31C (NPN Bipolar Power Transistor)

R25.80

The TIP31C is a bipolar NPN power transistor that is commonly used in electronic circuits for switching and amplifier applications. It is designed to handle high collector-emitter voltage (VCEO) and collector current (IC) ratings, making it suitable for use in a wide range of applications, including power switching, inverters, and audio amplifiers. The TIP31C has a maximum VCEO rating of 60V and a maximum IC rating of 3A. It is typically used in circuits that require high switching speeds and low saturation voltage. The transistor has three leads: the collector, the base, and the emitter. It is important to observe proper polarity when using the TIP31C, as connecting it in the wrong direction can damage the transistor and potentially cause other problems in the circuit.

A bipolar junction transistor (bipolar transistor or BJT) is a type of transistor that uses both electron and hole charge carriers. In contrast, unipolar transistors, such as field-effect transistors, only use one kind of charge carrier. For their operation, BJTs use two junctions between two semiconductor types, n-type and p-type.

Charge flow in a BJT is due to diffusion of charge carriers across a junction between two regions of different charge concentrations. The regions of a BJT are called emitter, collector, and base. A discrete transistor has three leads for connection to these regions. Typically, the emitter region is heavily doped compared to the other two layers, whereas the majority charge carrier concentrations in base and collector layers are about the same (collector doping is typically ten times lighter than base doping ). By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where they are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.